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APT20F50B APT20F50S
500V,20A,0.30Max,Trr 200nS
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
TO
-2
47
D3PAK
APT20F50B
APT20F50S
D
Single die FREDFET
G S
FEATURES
*FastswitchingwithlowEMI *Lowtrrforhighreliability *UltralowCrssforimprovednoiseimmunity *Lowgatecharge *Avalancheenergyrated *RoHScompliant
TYPICAL APPLICATIONS
* ZVSphaseshiftedandotherfullbridge *Halfbridge *PFCandotherboostconverter * Buckconverter *Singleandtwoswitchforward *Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 20 13 60 30 405 10
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.15 150 300 Min Typ Max 290 0.43 Unit W C/W
C oz g in*lbf N*m
05-2009 050-8156 Rev C
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ=25Cunlessotherwisespecified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 10A VGS = VDS, ID = 0.5mA VDS = 500V VGS = 0V TJ = 25C TJ = 125C
AP20F50B_S
Typ 0.60 0.25 4 -10 Max Unit V V/C V mV/C 100 500 100 A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 500
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.30 5
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ=25Cunlessotherwisespecified
Test Conditions
VDS = 50V, ID = 10A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 14 2950 40 320 185
Max
Unit S
pF
VGS = 0V, VDS = 0V to 333V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 10A, VDS = 250V ResistiveSwitching VDD = 333V, ID = 10A RG = 10 6 , VGG = 15V
95 75 17 34 13 15 34 11 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 20
Unit
G S
A 60 175 310 0.62 1.47 6.6 8.9 1.0 200 370 V ns C A 20 V/ns
ISD = 10, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 10A 3 diSD/dt = 100A/s VDD = 100V TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 10A, di/dt 1000A/s, VDD = 333V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 8.10mH, RG = 25, IAS = 10A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
05-2009 Rev C
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.05E-7/VDS^2 + 2.44E-8/VDS + 6.99E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
050-8156
70 60 ID, DRAIN CURRENT (A) 50 40
V
GS
= 10V
35
TJ = -55C
T = 125C
J
APT20F50B_S
V
GS
= 7 &10V 6.5V
30 ID, DRIAN CURRENT (A) 25 20 15
6V
TJ = 25C
30 20
TJ = 150C
5.5V
10 5
5V
10
TJ = 125C
0
0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure1,OutputCharacteristics
NORMALIZED TO VGS = 10V @ 10A
0
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure2,OutputCharacteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
2.5
60 50 ID, DRAIN CURRENT (A) 40
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0
1.5
TJ = -55C
30
TJ = 25C
1.0
20
TJ = 125C
0.5
10 0
0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure3,RDS(ON)vsJunctionTemperature 25
TJ = -55C
0
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure4,TransferCharacteristics Ciss
4,000
gfs, TRANSCONDUCTANCE
20 C, CAPACITANCE (pF)
TJ = 25C
1,000
15
TJ = 125C
10
100
Coss
5 Crss 0
0
0
2
6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Figure5,GainvsDrainCurrent
4
10
100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure6,CapacitancevsDrain-to-SourceVoltage
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
ID = 10A
60 ISD, REVERSE DRAIN CURRENT(A) 50 40
TJ = 25C
VDS = 100V VDS = 250V
30
TJ = 150C
VDS = 400V
20 10 0
050-8156
20 40 60 80 100 120 Qg, TOTAL GATE CHARGE (nC) Figure7,GateChargevsGate-to-SourceVoltage
0
0
0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure8,DrainCurrentvsSource-to-DrainVoltage
0
Rev C
05-2009
80
IDM
80
IDM
APT20F50B_S
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
10
13s 100s 1ms 10ms 100ms DC line TJ = 125C TC = 75C
10
13s 100s 1ms 10ms 100ms DC line
Rds(on)
1
Rds(on)
1
TJ = 150C TC = 25C
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
0.1
1
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure9,ForwardSafeOperatingArea
0.1
C
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure10,MaximumForwardSafeOperatingArea
1
0.50
ZJC, THERMAL IMPEDANCE (C/W)
0.40
D = 0.9
0.30
0.7
0.5 0.20 0.3 0.10 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure11.MaximumEffectiveTransientThermalImpedanceJunction-to-CasevsPulseDuration
1.0
TO-247(B)PackageOutline
e3 100% Sn Plated
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D3PAKPackageOutline
Drain (HeatSink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
05-2009
0.40 (.016) 0.79 (.031)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Rev C
Gate Drain Source
HeatSink(Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-8156
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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